H10D 30/80
Fets having rectifying junction gate electrodes
Official title: FETs having rectifying junction gate electrodes (H10D30/40 takes precedence)
H10D30/80 (Fets having rectifying junction gate electrodes) appears on 2,686 US grants and 2,304 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,686
- Published applications
- 2,304
- Assignees
- 669
- Inventors
- 3,655
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 20 | 0 |
| 1977 | 16 | 0 |
| 1978 | 15 | 0 |
| 1979 | 18 | 0 |
| 1980 | 23 | 0 |
| 1981 | 20 | 0 |
| 1982 | 25 | 0 |
| 1983 | 21 | 0 |
| 1984 | 28 | 0 |
| 1985 | 23 | 0 |
| 1986 | 23 | 0 |
| 1987 | 31 | 0 |
| 1988 | 26 | 0 |
| 1989 | 34 | 0 |
| 1990 | 37 | 0 |
| 1991 | 35 | 0 |
| 1992 | 26 | 0 |
| 1993 | 26 | 0 |
| 1994 | 41 | 0 |
| 1995 | 37 | 0 |
| 1996 | 35 | 0 |
| 1997 | 39 | 0 |
| 1998 | 36 | 0 |
| 1999 | 47 | 0 |
| 2000 | 42 | 0 |
| 2001 | 40 | 19 |
| 2002 | 45 | 56 |
| 2003 | 40 | 58 |
| 2004 | 64 | 77 |
| 2005 | 56 | 88 |
| 2006 | 60 | 77 |
| 2007 | 65 | 86 |
| 2008 | 45 | 113 |
| 2009 | 82 | 85 |
| 2010 | 97 | 90 |
| 2011 | 82 | 95 |
| 2012 | 77 | 97 |
| 2013 | 92 | 109 |
| 2014 | 101 | 114 |
| 2015 | 140 | 140 |
| 2016 | 117 | 94 |
| 2017 | 98 | 97 |
| 2018 | 97 | 110 |
| 2019 | 99 | 127 |
| 2020 | 105 | 85 |
| 2021 | 89 | 89 |
| 2022 | 66 | 72 |
| 2023 | 60 | 77 |
| 2024 | 62 | 107 |
| 2025 | 50 | 77 |
| 2026 | 33 | 65 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor element and production method for same29 Sep 2026US 12,751,048 B2National Institute of Information and Communications Technology
- Quasi-vertical power device15 Sep 2026US 12,740,093 B2Virginia Polytechnic Institute and State University
- SiC VJFET with edge termination for dual tilted gate implants15 Sep 2026US 12,740,107 B2Wolfspeed, Inc.
- Junction field effect transistor device and method of manufacturing the same15 Sep 2026US 12,740,116 B2Richtek Technology Corporation
- Semiconductor power device with improved ruggedness25 Aug 2026US 12,720,813 B2Nexperia B. V.
- Apparatus including fet and integrated sbd located inside of fet unit cell1 Oct 2026US 2026/0304916 A1Microchip Technology Incorporated
- Integrated circuits with self-aligned tub architecture24 Sep 2026US 2026/0293219 A1Intel Foundry IP LLC
- Methods for fabricating vertical semiconductor device with robust gate region and edge termination region and structures24 Sep 2026US 2026/0293220 A1Semiconductor Components Industries, LLC
- Apparatus including fet and integrated sbd located outside of fet unit cell10 Sep 2026US 2026/0271358 A1Microchip Technology Incorporated
- Vertical field effect transistor device and method of fabrication20 Aug 2026US 2026/0247655 A1Power Integrations, Inc.
Most cited
By later US patents
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Semiconductor device having a hollow around a gate electrode and a method for producing the same480US 5,559,046 AMatsushita Electronics Corporation · 1996
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Semiconductor device including a vertical field effect transistor, having trenches, and a diode336US 7,307,313 B2Denso Corporation · 2007
- Method of fabricating a self-aligned metal-semiconductor FET having an insulator spacer272US 4,711,858 AInternational Business Machines Corporation · 1987