H10D 30/801
Fets having heterojunction gate electrodes
Official title: {FETs having heterojunction gate electrodes}
H10D30/801 (Fets having heterojunction gate electrodes) appears on 349 US grants and 258 published applications in this corpus.
Search patents in H10D- Granted patents
- 349
- Published applications
- 258
- Assignees
- 151
- Inventors
- 607
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 5 | 0 |
| 1988 | 6 | 0 |
| 1989 | 5 | 0 |
| 1990 | 6 | 0 |
| 1991 | 5 | 0 |
| 1992 | 6 | 0 |
| 1993 | 4 | 0 |
| 1994 | 6 | 0 |
| 1995 | 8 | 0 |
| 1996 | 5 | 0 |
| 1997 | 7 | 0 |
| 1998 | 6 | 0 |
| 1999 | 15 | 0 |
| 2000 | 8 | 0 |
| 2001 | 7 | 4 |
| 2002 | 13 | 21 |
| 2003 | 13 | 20 |
| 2004 | 22 | 37 |
| 2005 | 27 | 14 |
| 2006 | 17 | 12 |
| 2007 | 15 | 11 |
| 2008 | 4 | 7 |
| 2009 | 9 | 10 |
| 2010 | 9 | 9 |
| 2011 | 8 | 8 |
| 2012 | 7 | 8 |
| 2013 | 7 | 9 |
| 2014 | 12 | 7 |
| 2015 | 12 | 7 |
| 2016 | 8 | 5 |
| 2017 | 6 | 6 |
| 2018 | 8 | 7 |
| 2019 | 6 | 11 |
| 2020 | 11 | 7 |
| 2021 | 10 | 11 |
| 2022 | 5 | 5 |
| 2023 | 2 | 7 |
| 2024 | 7 | 6 |
| 2025 | 3 | 5 |
| 2026 | 5 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor power device with improved ruggedness25 Aug 2026US 12,720,813 B2Nexperia B. V.
- Integrated circuits with self-aligned tub architecture14 Jul 2026US 12,684,824 B2Intel Corporation
- Buried shield structures for power semiconductor devices and related fabrication methods23 Jun 2026US 12,666,658 B2Wolfspeed, Inc.
- Diamond-capped gallium oxide transistor26 May 2026US 12,642,016 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Vertical fin-based field effect transistor (FinFET) with connected fin tips7 Apr 2026US 12,598,805 B2Semiconductor Components Industries, LLC
- Integrated circuits with self-aligned tub architecture24 Sep 2026US 2026/0293219 A1Intel Foundry IP LLC
- Gallium oxide junction field effect transistor25 Jun 2026US 2026/0182006 A1Power Cubesemi Inc.
- Trench field-effect transistor (fet)14 May 2026US 2026/0136608 A1Semiconductor Components Industries, LLC
- Semiconductor device with a field plate having a recessed region and an overhanging portion and method of fabrication therefor5 Feb 2026US 2026/0040647 A1NXP USA, Inc.
- Transistor including a silicon layer in a trench structure18 Dec 2025US 2025/0386556 A1
Most cited
By later US patents
- Semiconductor transistor having a backfilled channel material231US 6,605,498 B1Intel Corporation · 2003
- Complementary junction heterostructure field-effect transistor223US 5,479,033 ASandia Corporation · 1995
- Semiconductor device200US 6,472,685 B2Matsushita Electric Industrial Co., Ltd. · 2002
- Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant195US 5,792,679 ASharp Kabushiki Kaisha · 1998
- Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits170US 6,703,688 B1AmberWave Systems Corporation · 2004