Gallium oxide junction field effect transistor

Abstract

Gallium oxide junction field effect transistor disclosed. Gallium oxide junction field effect transistor includes a gallium oxide substrate, an n-type gallium oxide epitaxial layer epitaxially grown on the gallium oxide substrate, a source electrode and a drain electrode formed on the n-type gallium oxide epitaxial layer, and a npn gate including a p-type nickel oxide layer located on the n-type gallium oxide epitaxial layer between the source electrode and the drain electrode, a p-type nickel diffusion region extending into the n-type gallium oxide epitaxial layer from a junction between the p-type nickel oxide layer and the n-type gallium oxide epitaxial layer, and an n-type gallium oxide thin film formed on the p-type nickel oxide layer.

Dependencies are inferred from the claim text.