Complementary junction heterostructure field-effect transistor

An integrated circuit comprising:

• (a) a compound semiconductor substrate having a plurality of epitaxially grown layers formed thereon, the layers including a buffer layer on the substrate, at least one first conducting channel layer above the buffer layer, a high bandgap layer above the first conducting channel layer and having a bandgap higher than the bandgap of the first conducting channel layer, and a first gate layer above the higher-bandgap layer;
• (b) at least one p-channel junction heterostructure field-effect transistor formed in the epitaxial layers, the p-channel transistor further comprising a first drain, a first source, and a first gate, and a plurality of electrodes thereupon;
• (c) at least one n-channel junction heterostructure field-effect transistor formed in the buffer layer, the n-channel transistor being located proximate to the p-channel transistor and in a region wherein the epitaxial layers above the buffer layer are removed, the n-channel transistor further comprising a second drain, a second source, and a second gate, and a plurality of electrodes thereupon;
• and
• (d) at least one isolation region formed in the substrate between the p-channel and n-channel transistors.