Diamond-capped gallium oxide transistor
AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsMarko J. Tadjer, Joseph A. Spencer, Alan G. Jacobs, Hannah N. Masten, James Spencer Lundh, Karl D. Hobart, Travis J. Anderson, Tatyana I. Feygelson, Bradford B. Pate, Boris N. Feigelson
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Abstract
A method for growing nanocrystalline diamond (NCD) on Ga2O3 to provide thermal management in Ga2O3-based devices. A protective SiNx interlayer is deposited on the Ga2O3 before growth of the NCD layer to protect the Ga2O3 from damage caused during growth of the NCD layer. The presence of the NCD provides thermal management and enables improved performance of the Ga2O3-based device.
Claims14
A method for forming a Ga2O3-based electronic device having enhanced thermal management properties, comprising:
- forming a Ga2O3-based buffer layer on a substrate;
- forming a Ga2O3-based barrier layer on the Ga2O3-based buffer layer;
- depositing a SiNx interlayer on the Ga2O3-based barrier layer;
- and
- forming a nanocrystalline diamond (NCD) layer on the Ga2O3 barrier layer;
- wherein the SiNx interlayer protects the Ga2O3 barrier layer from damage during formation of the NCD layer;
- and
- wherein the NCD layer provides thermal management to the device.
An Ga2O3-based electronic device having enhanced thermal management properties, comprising:
- a Ga2O3-based buffer layer formed on a substrate;
- a Ga2O3-based barrier layer formed on the Ga2O3-based buffer layer;
- a SiNx interlayer deposited on the Ga2O3-based barrier layer;
- and
- a nanocrystalline diamond (NCD) layer formed on the Ga2O3 barrier layer
- wherein the SiNx interlayer protects the Ga2O3 barrier layer from damage during growth of the NCD layer;
- and
- wherein the NCD layer provides thermal management to the device.
Dependencies are inferred from the claim text.