H10D 30/803
Programmable transistors
Official title: {Programmable transistors, e.g. having charge-trapping quantum well}
H10D30/803 (Programmable transistors) appears on 31 US grants and 19 published applications in this corpus.
Search patents in H10D- Granted patents
- 31
- Published applications
- 19
- Assignees
- 20
- Inventors
- 42
- Latest grant
- 12 Mar 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 4 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 0 |
| 2004 | 2 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 5 |
| 2012 | 4 | 3 |
| 2013 | 3 | 3 |
| 2014 | 2 | 0 |
| 2015 | 2 | 2 |
| 2016 | 3 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Electronic memory devices12 Mar 2024US 11,929,120 B2University of Lancaster
- Electronic memory devices26 Mar 2019US 10,243,086 B2Lancaster University Business Enterprises Limited
- Enhancement mode III-nitride transistor27 Dec 2016US 9,530,877 B2Infineon Technologies Americas Corp.
- Memory cell23 Aug 2016US 9,424,925 B2Technische UniversitäT Berlin
- Programmable gate III-nitride power transistor12 Jan 2016US 9,236,462 B2Infineon Technologies Americas Corp.
- Improvements Relating to Electronic Memory Devices21 Jul 2022US 2022/0230686 A1University of Lancaster
- Electronic Memory Devices7 Dec 2017US 2017/0352767 A1Lancaster University Business Enterprises Limited
- Enhancement Mode III-Nitride Transistor19 Nov 2015US 2015/0333165 A1International Rectifier Corporation
- Memory cell29 Oct 2015US 2015/0310919 A1Technische UniversitäT Berlin
- Enhancement Mode III-Nitride Transistors with Single Gate Dielectric Structure7 Nov 2013US 2013/0292694 A1International Rectifier Corporation
Most cited
By later US patents
- Semiconductor device77US 6,720,589 B1Kabushiki Kaisha Toshiba · 2004
- Floating gate memory circuit and apparatus67US 4,945,393 AAT&T Bell Laboratories · 1990
- Floating gate memories64US 4,905,063 AAmerican Telephone and Telegraph Company, AT&T Bell Laboratories · 1990
- Real space electron transfer device using hot electron injection23US 4,903,092 AAmerican Telephone and Telegraph Company, AT&T Bell Laboratories · 1990
- FET with Fermi level pinning between channel and heavily doped semiconductor gate20US 4,698,652 AHitachi, Ltd. · 1987