Memory cell
AssigneeTechnische UniversitäT Berlin
InventorsAndreas Marent, Dieter BIMBERG
Life of this patent
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Abstract
The invention relates, inter alia, to a memory cell (10) comprising at least one binary memory area for storing bit information. According to the invention it is provided that the memory area (SB) can optionally store holes or electrons and allows a recombination of holes and electrons, the charge carrier type of the charge carriers stored in the memory area defines the bit information of the memory area, and a charge carrier injection device (PN) is present, by means of which optionally holes or electrons can be injected into the memory area (SB) and the bit information can thus be changed.
Claims11
A memory cell (10) comprising at least one binary memory area for storing bit information, wherein
- the memory area (SB) can optionally store holes or electrons and allows a recombination of holes and electrons,
- the charge carrier type of the charge carriers stored in the memory area defines the bit information of the memory area, and
- a charge carrier injection device (PN) is present, by means of which optionally holes or electrons can be injected into the memory area (SB) and the bit information can thus be changed.
A method for storing bit information in a binary memory area, wherein
- holes or electrons are stored in the memory area (SB) depending on the bit information to be stored, wherein the charge carrier type of the charge carriers stored in the memory area defines the bit information of the memory cell, and
- in order to change the bit information respectively stored, the charge carriers stored in the memory area are removed by virtue of the fact that complementary charge carriers are injected, which recombine with the stored charge carriers, and
- the new bit information is brought about by further complementary charge carriers being stored in the memory area.
Dependencies are inferred from the claim text.