Back to results
US 9,236,462 B2Granted
Programmable gate III-nitride power transistor
AssigneeInfineon Technologies Americas Corp.
InventorMichael A. Briere
Life of this patent
Estimating the term…
Abstract
A III-nitride semiconductor device which includes a charged floating gate electrode.
Claims20
A programmable III-Nitride power transistor comprising:
- a first III-nitride semiconductor body;
- a second III-nitride semiconductor body situated over said first III-nitride semiconductor body to form a two dimensional electron gas;
- a passivation layer situated over said second III-nitride semiconductor body;
- a gate arrangement disposed over said second III-nitride semiconductor body, said gate arrangement including a non-volatile floating gate situated in a trench within said passivation layer, and a gate electrode situated over said non-volatile floating gate and electrically insulated from said non-volatile floating gate by an insulation spacer in said trench, said non-volatile floating gate configured for programming said III-Nitride power transistor by a current produced in said two dimensional electron gas.
1 more element
A method of fabricating a programmable III-Nitride power transistor, said method comprising:
- disposing a first III-nitride semiconductor body over a second III-nitride semiconductor body to form a two dimensional electron gas;
- forming a gate insulation body over said second III-nitride semiconductor body;
- forming a non-volatile floating gate over said gate insulation body, said non-volatile floating gate situated in a trench within a passivation layer;
- disposing a gate electrode over said non-volatile floating gate and electrically insulated from said non-volatile floating gate by an insulation spacer in said trench;
- charging said non-volatile floating gate by a current produced in said two dimensional electron gas to obtain a non-volatile charged floating gate electrode.
2 more elements
Dependencies are inferred from the claim text.