Real space electron transfer device using hot electron injection

A logic element comprising two series-connected semiconductor devices, each of said devices comprising

• three semiconductor regions which are spatially sequential in a first direction, and which here are designated, in sequence, as first channel region, potential-barrier region, and second channel region, said first and second channel regions having respective first and second bandgaps, and said potential-barrier region having a composition adapted to forming a potential barrier between said first and second channel regions;
• means for supplying carriers to said first and second channel regions;
• first and second contacts to said first channel region, said first and second contacts being spaced apart in a second direction which is perpendicular to said first direction, and said first and second contacts being such as not to make contact to said second channel region;
• and a third contact to said second channel region.