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US 2026/0271358 A1Published application
Apparatus including fet and integrated sbd located outside of fet unit cell
AssigneeMicrochip Technology Incorporated
InventorsShesh Mani Pandey, Yogesh Kumar Sharma
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Abstract
An apparatus includes a field-effect transistor (FET) and a physically and functionally integrated Schottky barrier diode located outside of the unit cell of the FET. A method of making the apparatus is also disclosed. The FET includes a source located at a first end of a volume of semiconductor material, a drain, and a channel for charge carriers moving therebetween. A gate is located adjacent the first end for facilitating controlling movement of the charge carriers through the channel.
Claims20
An apparatus comprising:
- a volume of semiconductor material including a first end and laterally spaced left and right sides;
- a field-effect transistor (FET) including –
- a source located at the first end of the volume of semiconductor material,
- a drain located spaced apart from the source,
- a gate located adjacent the first end of the volume of semiconductor material, with the source and the gate being spaced apart to cooperatively define a FET until cell located between the left and right sides of the volume of the volume of semiconductor material;
- and
- a first Schottky barrier diode (SBD) located at the first end of the volume of semiconductor material and outside of and adjacent to the FET unit cell.
4 more elements
A method of making an apparatus, the method comprising:
- providing a volume of semiconductor material to present a first end and laterally spaced left and right sides;
- making a first field-effect transistor (FET), including –
- forming a source at the first end of the volume of semiconductor material,
- providing a drain spaced apart from the source,
- forming a gate adjacent the first end of the volume of semiconductor material spaced from the source, such that the source and the gate cooperatively define a FET until cell located between the left and right sides of the volume of the volume of semiconductor material;
- and
- making a first Schottky barrier diode (SDB) at the first end of the volume of semiconductor material and outside of and adjacent to the FET unit cell.
4 more elements
Dependencies are inferred from the claim text.