H10D 30/83
Fets having pn junction gate electrodes
Official title: FETs having PN junction gate electrodes
H10D30/83 (Fets having pn junction gate electrodes) appears on 1,326 US grants and 1,362 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,326
- Published applications
- 1,362
- Assignees
- 392
- Inventors
- 1,745
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 7 | 0 |
| 1978 | 4 | 0 |
| 1979 | 9 | 0 |
| 1980 | 11 | 0 |
| 1981 | 8 | 0 |
| 1982 | 6 | 0 |
| 1983 | 8 | 0 |
| 1984 | 9 | 0 |
| 1985 | 6 | 0 |
| 1986 | 6 | 0 |
| 1987 | 7 | 0 |
| 1988 | 6 | 0 |
| 1989 | 8 | 0 |
| 1990 | 9 | 0 |
| 1991 | 8 | 0 |
| 1992 | 9 | 0 |
| 1993 | 6 | 0 |
| 1994 | 12 | 0 |
| 1995 | 9 | 0 |
| 1996 | 4 | 0 |
| 1997 | 9 | 0 |
| 1998 | 13 | 0 |
| 1999 | 11 | 0 |
| 2000 | 9 | 0 |
| 2001 | 16 | 5 |
| 2002 | 8 | 13 |
| 2003 | 7 | 9 |
| 2004 | 18 | 13 |
| 2005 | 15 | 42 |
| 2006 | 23 | 36 |
| 2007 | 33 | 46 |
| 2008 | 21 | 64 |
| 2009 | 41 | 52 |
| 2010 | 70 | 55 |
| 2011 | 43 | 60 |
| 2012 | 45 | 56 |
| 2013 | 57 | 68 |
| 2014 | 66 | 71 |
| 2015 | 80 | 90 |
| 2016 | 72 | 57 |
| 2017 | 57 | 65 |
| 2018 | 66 | 69 |
| 2019 | 63 | 80 |
| 2020 | 65 | 59 |
| 2021 | 56 | 57 |
| 2022 | 44 | 52 |
| 2023 | 50 | 59 |
| 2024 | 44 | 70 |
| 2025 | 36 | 60 |
| 2026 | 26 | 54 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Quasi-vertical power device15 Sep 2026US 12,740,093 B2Virginia Polytechnic Institute and State University
- SiC VJFET with edge termination for dual tilted gate implants15 Sep 2026US 12,740,107 B2Wolfspeed, Inc.
- Junction field effect transistor device and method of manufacturing the same15 Sep 2026US 12,740,116 B2Richtek Technology Corporation
- Auto-doping reduction in semiconductor structure28 Jul 2026US 12,696,505 B2Texas Instruments Incorporated
- Semiconductor device21 Jul 2026US 12,690,239 B2DB HiTek Co., Ltd.
- Apparatus including fet and integrated sbd located inside of fet unit cell1 Oct 2026US 2026/0304916 A1Microchip Technology Incorporated
- Integrated circuits with self-aligned tub architecture24 Sep 2026US 2026/0293219 A1Intel Foundry IP LLC
- Methods for fabricating vertical semiconductor device with robust gate region and edge termination region and structures24 Sep 2026US 2026/0293220 A1Semiconductor Components Industries, LLC
- Apparatus including fet and integrated sbd located outside of fet unit cell10 Sep 2026US 2026/0271358 A1Microchip Technology Incorporated
- Vertical field effect transistor device and method of fabrication20 Aug 2026US 2026/0247655 A1Power Integrations, Inc.
Most cited
By later US patents
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Semiconductor device including a vertical field effect transistor, having trenches, and a diode336US 7,307,313 B2Denso Corporation · 2007
- Active matrix using hybrid integrated circuit and bipolar transistor272US 8,906,755 B1International Business Machines Corporation · 2014
- Vertical field effect transistor and diode197US 6,097,046 ATexas Instruments Incorporated · 2000
- Semiconductor device having a plurality of parallel drift regions189US 6,097,063 AFuji Electric Co., Ltd. · 2000