H10D 30/831
Vertical fets having pn junction gate electrodes
Official title: {Vertical FETs having PN junction gate electrodes (Vertical SIT H10D30/202)}
H10D30/831 (Vertical fets having pn junction gate electrodes) appears on 624 US grants and 687 published applications in this corpus.
Search patents in H10D- Granted patents
- 624
- Published applications
- 687
- Assignees
- 222
- Inventors
- 832
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 4 | 0 |
| 1981 | 5 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 5 | 0 |
| 1998 | 7 | 0 |
| 1999 | 5 | 0 |
| 2000 | 5 | 0 |
| 2001 | 10 | 2 |
| 2002 | 4 | 7 |
| 2003 | 3 | 7 |
| 2004 | 9 | 7 |
| 2005 | 13 | 30 |
| 2006 | 14 | 20 |
| 2007 | 22 | 18 |
| 2008 | 9 | 8 |
| 2009 | 12 | 21 |
| 2010 | 29 | 26 |
| 2011 | 13 | 25 |
| 2012 | 22 | 22 |
| 2013 | 25 | 40 |
| 2014 | 32 | 38 |
| 2015 | 44 | 55 |
| 2016 | 46 | 27 |
| 2017 | 26 | 30 |
| 2018 | 29 | 34 |
| 2019 | 36 | 42 |
| 2020 | 32 | 25 |
| 2021 | 24 | 27 |
| 2022 | 21 | 28 |
| 2023 | 23 | 39 |
| 2024 | 25 | 35 |
| 2025 | 22 | 35 |
| 2026 | 16 | 39 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Quasi-vertical power device15 Sep 2026US 12,740,093 B2Virginia Polytechnic Institute and State University
- SiC VJFET with edge termination for dual tilted gate implants15 Sep 2026US 12,740,107 B2Wolfspeed, Inc.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method23 Jun 2026US 12,666,696 B2Monolithic Power Systems, Inc.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method23 Jun 2026US 12,666,697 B2Monolithic Power Systems, Inc.
- Vertical field effect transistor device and method of fabrication26 May 2026US 12,641,821 B2Power Integrations, Inc.
- Apparatus including fet and integrated sbd located inside of fet unit cell1 Oct 2026US 2026/0304916 A1Microchip Technology Incorporated
- Methods for fabricating vertical semiconductor device with robust gate region and edge termination region and structures24 Sep 2026US 2026/0293220 A1Semiconductor Components Industries, LLC
- Apparatus including fet and integrated sbd located outside of fet unit cell10 Sep 2026US 2026/0271358 A1Microchip Technology Incorporated
- Vertical field effect transistor device and method of fabrication20 Aug 2026US 2026/0247655 A1Power Integrations, Inc.
- Method and system for vertical gan jfet with isolated back barrier13 Aug 2026US 2026/0239654 A1Alithia Power Inc.
Most cited
By later US patents
- Semiconductor device including a vertical field effect transistor, having trenches, and a diode336US 7,307,313 B2Denso Corporation · 2007
- Vertical field effect transistor and diode197US 6,097,046 ATexas Instruments Incorporated · 2000
- Silicon carbide switching device with rectifying-gate174US 5,396,085 ANorth Carolina State University · 1995
- Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses146US 6,291,298 B1Advanced Analogic Technologies, Inc. · 2001
- Edge structure and drift region for a semiconductor component and production method144US 6,274,904 B1Siemens Aktiengesellschaft · 2001