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US 6,274,904 B1Granted
Edge structure and drift region for a semiconductor component and production method
AssigneeSiemens Aktiengesellschaft
InventorJenoe Tihanyi
Life of this patent
Estimating the term…
Abstract
The invention relates to an edge structure and a drift region for a semiconductor component. A semiconductor body of the one conductivity type has an edge area with a plurality of regions of the other conductivity type embedded in at least two mutually different planes. Underneath an active zone of the semiconductor component the regions are connected over different planes via connection zone, but the regions are otherwise floating.
Claims9
An edge structure and drift region of a semiconductor component, comprising:
- a semiconductor body of a first conductivity type formed of a plurality of planes;
- an active zone of a second conductivity type opposite the first conductivity type disposed in said semiconductor body;
- a plurality of regions of the second conductivity type embedded in at least two mutually different planes in said semiconductor body;
- and
- connection zones formed in an area substantially underneath said active zone, connecting said regions to one another across different said planes, whereby said regions are otherwise floating regions.
2 more elements
Dependencies are inferred from the claim text.