Semiconductor device with integrated junction field effect transistor and associated manufacturing method
AssigneeMonolithic Power Systems, Inc.
InventorsVipindas Pala, Sauvik Chowdhury
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Abstract
A semiconductor device includes a first source region, a first sidewall body region, a gate region, a second source region and a link region formed in a substrate of a first conductivity type. The first source region and the second source region may be of the first conductivity type while the first sidewall body region and the link region may be of a second conductivity type opposite to the first conductivity type. The link region and the gate region are respectively disposed at a first side and a second side of the first source region. The first sidewall body region may be disposed below or underneath the first source region.
Claims28
A semiconductor device, comprising:
- a drain region of a first conductivity type, disposed adjacent a first surface of a substrate of the semiconductor device;
- a first source region of the first conductivity type, disposed adjacent a second surface of the substrate, the second surface being opposite to the first surface;
- a first sidewall body region of a second conductivity type, disposed below or underneath the first source region, the second conductivity type being opposite to the first conductivity type;
- a gate region, disposed next to or in adjoining neighbor to the first source region;
- a second source region of the first conductivity type, disposed below or underneath the first sidewall body region;
- and
- a link region of the second conductivity type, disposed spatially opposite to the gate region and having a portion extended vertically down into the substrate deeper than the second source region.
A semiconductor device including a plurality of transistor cells, each one of the plurality of transistor cells comprising:
- a drain region of a first conductivity type, disposed adjacent a first surface of a substrate of the semiconductor device;
- a first source region of the first conductivity type, disposed adjacent a second surface of the substrate, the second surface being opposite to the first surface;
- a first sidewall body region of a second conductivity type, disposed below or underneath the first source region, the second conductivity type being opposite to the first conductivity type;
- a gate region, disposed next to or in adjoining neighbor to the first source region;
- a second source region of the first conductivity type, disposed below or underneath the first sidewall body region;
- and
- a link region of the second conductivity type, disposed spatially opposite to the gate region and having a portion extended vertically down into the substrate deeper than the second source region.
Dependencies are inferred from the claim text.