Auto-doping reduction in semiconductor structure
AssigneeTexas Instruments Incorporated
InventorsTakashi Shiga, Hiromi Endoh, Tatsuya Tominari
Life of this patent
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Abstract
The present disclosure generally relates to reducing auto-doping in a semiconductor structure. In an example, semiconductor device structure includes a semiconductor substrate, a first epitaxial layer, and a second epitaxial layer. The semiconductor substrate has a first region and a second region. The first region includes a doped layer doped with a first dopant in the semiconductor substrate. The first epitaxial layer is on the doped layer in the first region. The second epitaxial layer is on the first epitaxial layer in the first region and on the semiconductor substrate in the second region.
Claims15
A semiconductor device structure, comprising:
- a semiconductor substrate having a first region and a second region, the first region including a doped layer doped with a first dopant in the semiconductor substrate;
- a cap layer on the doped layer in the first region;
- and
- an epitaxial layer on the cap layer in the first region and on the semiconductor substrate in the second region, wherein the epitaxial layer is in direct contact with the semiconductor substrate in the second region.
A semiconductor device structure, comprising:
- a silicon substrate having a first region and a second region, the silicon substrate including in the first region a buried layer;
- a silicon cap layer on the silicon substrate over the buried layer in the first region;
- and
- a p-type silicon layer on the silicon cap layer in the first region and on the silicon substrate in the second region.
Dependencies are inferred from the claim text.