H10D 30/832
Thin-film junction fets [jfet]
Official title: {Thin-film junction FETs [JFET]}
H10D30/832 (Thin-film junction fets [jfet]) appears on 87 US grants and 87 published applications in this corpus.
Search patents in H10D- Granted patents
- 87
- Published applications
- 87
- Assignees
- 53
- Inventors
- 176
- Latest grant
- 10 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 3 |
| 2006 | 1 | 2 |
| 2007 | 4 | 6 |
| 2008 | 0 | 7 |
| 2009 | 5 | 4 |
| 2010 | 5 | 7 |
| 2011 | 4 | 3 |
| 2012 | 5 | 2 |
| 2013 | 5 | 7 |
| 2014 | 4 | 3 |
| 2015 | 8 | 7 |
| 2016 | 1 | 4 |
| 2017 | 4 | 6 |
| 2018 | 4 | 4 |
| 2019 | 6 | 8 |
| 2020 | 8 | 1 |
| 2021 | 1 | 3 |
| 2022 | 0 | 1 |
| 2023 | 1 | 1 |
| 2024 | 2 | 2 |
| 2025 | 1 | 4 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Silicon-on-insulator (SOI) device having variable thickness device layer and corresponding method of production10 Jun 2025US 12,328,891 B2Infineon Technologies Austria AG
- Semiconductor device including poly-silicon junction field-effect transistor and manufacturing method thereof9 Jul 2024US 12,034,084 B2SK keyfoundry Inc.
- Low voltage/power junction FET with all-around junction gate9 Jan 2024US 11,869,983 B2International Business Machines Corporation
- Current reference28 Mar 2023US 11,616,141 B2Texas Instruments Incorporated
- Junction field effect transistor (JFET) structure and methods to form same17 Aug 2021US 11,094,834 B2GLOBALFOUNDRIES U. S. Inc.
- Power semiconductor devices and methods of fabricating the same12 Mar 2026US 2026/0075916 A1Samsung Electronics Co., Ltd.
- Transistor and method for manufacturing same12 Feb 2026US 2026/0047150 A1Microchip Technology Incorporated
- Semiconductor device25 Dec 2025US 2025/0393260 A1Samsung Electronics Co., Ltd.
- Semiconductor devices and methods of manufacturing thereof27 Nov 2025US 2025/0366100 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor die having a variable thickness device layer4 Sep 2025US 2025/0280558 A1Infineon Technologies Austria AG
Most cited
By later US patents
- Pitch multiplication process145US 7,208,379 B2Texas Instruments Incorporated · 2007
- Si/SiGe vertical junction field effect transistor123US 5,714,777 AInternational Business Machines Corporation · 1998
- Silicon device on Si:C-OI and SGOI and method of manufacture89US 7,247,534 B2International Business Machines Corporation · 2007
- Process for making junction field-effect transistors58US 4,700,461 AMassachusetts Institute of Technology · 1987
- Integrated circuit in silicon on insulator technology comprising a field effect transistor56US 5,130,770 ABrevatome · 1992