Junction field effect transistor (JFET) structure and methods to form same

A junction field effect transistor (JFET) structure, comprising:

• a semiconductor layer including a channel region between a source region and a drain region;
• a doped polysilicon gate over the channel region of the semiconductor layer, the doped polysilicon gate having a first doping type, wherein the doped polysilicon gate includes a first sidewall and a second sidewall opposite the first sidewall;
• a raised epitaxial source on the source region of the semiconductor layer and adjacent the first sidewall of the doped polysilicon gate, the raised epitaxial source having a second doping type opposite the first doping type;
• a raised epitaxial drain on the drain region of the semiconductor layer and adjacent the second sidewall of the doped polysilicon gate, the raised epitaxial drain having the second doping type;
• a doped semiconductor region within the channel region of the semiconductor layer and extending from the source region to the drain region;
• and
• a non-conductive portion of the semiconductor layer within the channel region separating the doped semiconductor region from the doped polysilicon gate.