Transistor and method for manufacturing same
AssigneeMicrochip Technology Incorporated
InventorShesh Mani Pandey
Life of this patent
Estimating the term…
Abstract
A transistor comprising an epi layer formed within a substrate. A junction field-effect transistor implant layer formed into the epi layer. A well implant layer formed within the junction field-effect transistor implant layer. A source implant layer formed into the junction field-effect transistor implant layer. A plurality of first gate implant layers formed into the junction field-effect transistor implant layer. A plurality of first gate contacts operatively connected to the respective first gate implant layer. A source contact operatively connected to the source implant layer. A second gate contact operatively connected to the well implant layer.
Claims20
A transistor comprising:
- a substrate;
- an epi layer formed within the substrate;
- a junction field-effect transistor implant layer formed into the epi layer;
- a well implant layer formed within the junction field-effect transistor implant layer;
- a source implant layer formed into the junction field-effect transistor implant layer;
- a plurality of first gate implant layers formed into the junction field-effect transistor implant layer;
- a plurality of first gate contacts operatively connected to the respective first gate implant layer;
- a source contact operatively connected to the source implant layer;
- and
- a second gate contact operatively connected to the well implant layer.
A method of manufacturing a transistor, the method comprising:
- providing a substrate;
- forming an epi layer within the substrate;
- implanting a junction field-effect transistor implant layer into the epi layer;
- implanting a well implant layer into the junction field-effect transistor implant layer;
- implanting a source implant layer into the junction field-effect transistor implant layer;
- implanting a plurality of first gate implant layers into the junction field-effect transistor implant layer;
- forming a plurality of first gate contacts operatively connected to the respective first gate implant layer;
- forming a source contact operatively connected to the source implant layer;
- and
- forming a second gate contact operatively connected to the well implant layer.
Dependencies are inferred from the claim text.