Semiconductor device
AssigneeDB HiTek Co., Ltd.
InventorHong Sik Shin
Life of this patent
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Abstract
A semiconductor device includes a channel region formed on a substrate, a source region formed on the channel region, a drain region formed on the channel region, a gate region formed on the channel region between the source region and the drain region, a source contact region formed on a portion of the source region, and a resistance region formed on another portion of the source region. The source contact region and the resistance region are electrically connected in parallel with a source terminal.
Claims18
A semiconductor device comprising:
- a channel region formed on a substrate;
- a source region formed on the channel region;
- a drain region formed on the channel region;
- a gate region formed on the channel region between the source region and the drain region;
- and
- a source contact region formed on a portion of the source region,
- wherein the source region and the source contact region are electrically connected in parallel with a source terminal and
- wherein the source contact region has an impurity concentration higher than that of the source region.
A semiconductor device comprising:
- a channel region formed on a substrate;
- a source region formed on the channel region;
- a drain region formed on the channel region;
- a gate region formed on the channel region between the source region and the drain region;
- a source contact region formed on a portion of the source region;
- and
- a resistance region formed on another portion of the source region,
- wherein the source contact region and the resistance region are electrically connected in parallel with a source terminal,
- wherein the source contact region and the resistance region have a same conductivity type as the source region,
- the source contact region has an impurity concentration higher than that of the source region, and
- the resistance region has an impurity concentration equal to or lower than that of the source region.
A semiconductor device comprising:
- a channel region formed on a substrate;
- a source region formed on the channel region;
- a drain region formed on the channel region;
- a gate region formed on the channel region between the source region and the drain region;
- a source contact region formed on a portion of the source region;
- and
- a resistance region formed on another portion of the source region,
- wherein the source contact region and the resistance region are electrically connected in parallel with a source terminal,
- wherein the source contact region has a same conductivity type as the source region, and
- the resistance region has a conductivity type different from that of the source region.
A semiconductor device comprising:
- a channel region formed on a substrate;
- a drain region formed on the channel region;
- a gate region formed on the channel region to surround the drain region;
- a source region formed on the channel region to surround the gate region;
- at least one source contact region formed on the source region;
- at least one resistance region formed on the source region;
- and
- a device isolation region formed to surround the source region,
- wherein the at least one source contact region and the at least one resistance region are electrically connected in parallel with a source terminal.
Dependencies are inferred from the claim text.