H10D 30/87
Fets having schottky gate electrodes
Official title: FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] {(FETs having Schottky contact on top of heterojunction gate H10D30/801)}
H10D30/87 (Fets having schottky gate electrodes) appears on 1,155 US grants and 826 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,155
- Published applications
- 826
- Assignees
- 354
- Inventors
- 1,832
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 9 | 0 |
| 1978 | 9 | 0 |
| 1979 | 11 | 0 |
| 1980 | 14 | 0 |
| 1981 | 15 | 0 |
| 1982 | 15 | 0 |
| 1983 | 12 | 0 |
| 1984 | 19 | 0 |
| 1985 | 15 | 0 |
| 1986 | 14 | 0 |
| 1987 | 19 | 0 |
| 1988 | 12 | 0 |
| 1989 | 19 | 0 |
| 1990 | 23 | 0 |
| 1991 | 25 | 0 |
| 1992 | 12 | 0 |
| 1993 | 17 | 0 |
| 1994 | 26 | 0 |
| 1995 | 26 | 0 |
| 1996 | 26 | 0 |
| 1997 | 27 | 0 |
| 1998 | 18 | 0 |
| 1999 | 25 | 0 |
| 2000 | 27 | 0 |
| 2001 | 19 | 10 |
| 2002 | 24 | 29 |
| 2003 | 24 | 29 |
| 2004 | 29 | 27 |
| 2005 | 16 | 31 |
| 2006 | 23 | 36 |
| 2007 | 19 | 32 |
| 2008 | 22 | 45 |
| 2009 | 34 | 27 |
| 2010 | 24 | 34 |
| 2011 | 38 | 33 |
| 2012 | 30 | 39 |
| 2013 | 35 | 40 |
| 2014 | 30 | 40 |
| 2015 | 53 | 48 |
| 2016 | 39 | 35 |
| 2017 | 38 | 41 |
| 2018 | 33 | 41 |
| 2019 | 40 | 43 |
| 2020 | 34 | 22 |
| 2021 | 31 | 26 |
| 2022 | 22 | 23 |
| 2023 | 11 | 18 |
| 2024 | 20 | 44 |
| 2025 | 16 | 19 |
| 2026 | 6 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor element and production method for same29 Sep 2026US 12,751,048 B2National Institute of Information and Communications Technology
- Multilayer encapsulation for humidity robustness and highly accelerated stress tests and related fabrication methods11 Aug 2026US 12,708,027 B2Wolfspeed, Inc.
- Methods to process 3D semiconductor devices and structures which have metal layers16 Jun 2026US 12,660,326 B2Monolithic 3D Inc.
- Laminated structure21 Apr 2026US 12,610,662 B2Japan Display Inc.
- Doped aluminum-alloyed gallium oxide and ohmic contacts20 Jan 2026US 12,532,530 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Metal-semiconductor field-effect transistors for gallium arsenide technologies20 Aug 2026US 2026/0247691 A1Skyworks Solutions, Inc.
- Diamond and semiconductor device6 Aug 2026US 2026/0231494 A1OOKUMA DIAMOND DEVICE Inc.
- Normally-off mode polarization super junction gan-based field effect transistor and electrical equipment25 Jun 2026US 2026/0181958 A1Powdec K. K.
- Semiconductor element11 Jun 2026US 2026/0164790 A1Japan Display Inc.
- Semiconductor device4 Jun 2026US 2026/0156857 A1NTT, Inc.
Most cited
By later US patents
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Semiconductor device having a hollow around a gate electrode and a method for producing the same480US 5,559,046 AMatsushita Electronics Corporation · 1996
- Method of fabricating a self-aligned metal-semiconductor FET having an insulator spacer272US 4,711,858 AInternational Business Machines Corporation · 1987
- Semiconductor device having a plurality of parallel drift regions189US 6,097,063 AFuji Electric Co., Ltd. · 2000
- Silicon carbide switching device with rectifying-gate174US 5,396,085 ANorth Carolina State University · 1995