US 2026/0164790 A1 · SEMICONDUCTOR ELEMENT

Abstract

A semiconductor element includes a first transistor and a second transistor over an amorphous substrate. The first transistor includes a buffer layer, a first nitride semiconductor layer over the buffer layer, a second nitride semiconductor layer forming a heterojunction with the first nitride semiconductor layer, and a first conductive layer in contact with the second nitride semiconductor layer and functioning as a source electrode or a drain electrode. The second transistor includes a non-nitride semiconductor layer, and a second conductive layer in contact with the non-nitride semiconductor layer and functioning as a source electrode or a drain electrode. The first conductive layer is electrically connected to the second conductive layer.

Claims20

Dependent claims

A semiconductor element, comprising;

a first transistor over an amorphous substrate, comprising:
a buffer layer;
a first nitride semiconductor layer over the buffer layer;
a second nitride semiconductor layer forming a heterojunction with the first nitride semiconductor layer;
and
a first conductive layer in contact with the second nitride semiconductor layer, and functioning as a source electrode or a drain electrode;
and
a second transistor over the amorphous substrate, comprising:
a non-nitride semiconductor layer;
and
a second conductive layer in contact with the non-nitride semiconductor layer, and functioning as a source electrode or a drain electrode,
wherein the first conductive layer is electrically connected to the second conductive layer.

9 more elements

Dependencies are inferred from the claim text.

Semiconductor element

Life of this patent

Semiconductor element

Life of this patent

Abstract

Claims20