Multilayer encapsulation for humidity robustness and highly accelerated stress tests and related fabrication methods

A semiconductor die comprising:

• a semiconductor body;
• a multi-layer environmental barrier comprising two or more sublayers that are stacked on the semiconductor body in a repeating layer structure;
• and
• one or more silicon nitride layers between the semiconductor body and the multi-layer environmental barrier,
• wherein the multi-layer environmental barrier comprises two or more diffusion barrier properties, wherein a collective stress of the multi-layer environmental barrier is less than that of the one or more silicon nitride layers comprising at least one of the diffusion barrier properties, and wherein a thickness of the multi-layer environmental barrier is less than a thickness of the one or more silicon nitride layers.

A method of fabricating a semiconductor die, the method comprising:

• providing a semiconductor body;
• and
• forming a multi-layer environmental barrier comprising a plurality of sublayers that are stacked on the semiconductor body, wherein forming the multi-layer environmental barrier comprises:
• forming a first stressor sublayer comprising a first stress;
• and
• forming a second stressor sublayer comprising a second stress on the first stressor sublayer, wherein the second stress and the first stress oppose one another,
• wherein the first stressor sublayer comprises a first material having a greater density than a second material of the second stressor sublayer, and the first stressor sublayer is thicker than the second stressor sublayer.

A semiconductor die, comprising:

• a semiconductor body;
• and
• a multi-layer environmental barrier on the semiconductor body, the multi-layer environmental barrier comprising a first sublayer of a metal insulating material and a second sublayer of a non-metal insulating material that are stacked, wherein respective stresses of the first and second sublayers oppose one another,
• wherein the first sublayer of the metal insulating material is thicker than the second sublayer of the non-metal insulating material.