H10D 30/877
Having recessed gate electrodes
Official title: {having recessed gate electrodes}
H10D30/877 (Having recessed gate electrodes) appears on 186 US grants and 100 published applications in this corpus.
Search patents in H10D- Granted patents
- 186
- Published applications
- 100
- Assignees
- 82
- Inventors
- 335
- Latest grant
- 8 Oct 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 4 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 6 | 0 |
| 1995 | 6 | 0 |
| 1996 | 14 | 0 |
| 1997 | 13 | 0 |
| 1998 | 13 | 0 |
| 1999 | 8 | 0 |
| 2000 | 8 | 0 |
| 2001 | 5 | 4 |
| 2002 | 6 | 2 |
| 2003 | 5 | 5 |
| 2004 | 1 | 4 |
| 2005 | 4 | 4 |
| 2006 | 2 | 4 |
| 2007 | 1 | 7 |
| 2008 | 4 | 11 |
| 2009 | 5 | 3 |
| 2010 | 3 | 6 |
| 2011 | 9 | 7 |
| 2012 | 6 | 8 |
| 2013 | 7 | 6 |
| 2014 | 1 | 4 |
| 2015 | 8 | 2 |
| 2016 | 3 | 2 |
| 2017 | 2 | 3 |
| 2018 | 5 | 4 |
| 2019 | 3 | 6 |
| 2020 | 3 | 1 |
| 2021 | 3 | 2 |
| 2022 | 1 | 1 |
| 2023 | 0 | 2 |
| 2024 | 2 | 0 |
| 2025 | 0 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Nitride semiconductor device with field effect gate8 Oct 2024US 12,113,110 B2Samsung Electronics Co., Ltd.
- Semiconductor device30 Jul 2024US 12,051,741 B2Sumitomo Electric Industries, Ltd.
- Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices11 Oct 2022US 11,469,312 B2Semiconductor Components Industries, LLC
- Ohmic alloy contact region sealing layer12 Oct 2021US 11,145,735 B2Raytheon Company
- Gate structure and method for producing same21 Sep 2021US 11,127,863 B2Forschungsverbund Berlin E.V.
- Dual-stage schottky barrier and method9 Oct 2025US 2025/0318240 A1
- Radiation doped semiconductor junctions12 Jun 2025US 2025/0194194 A1The Curators of the University of Missouri
- Trench-type mesfet9 Feb 2023US 2023/0043402 A1Novel Crystal Technology, Inc.
- Nitride semiconductor device with field effect gate5 Jan 2023US 2023/0006047 A1Samsung Electronics Co., Ltd.
- Semiconductor device17 Mar 2022US 2022/0085198 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Semiconductor device having a hollow around a gate electrode and a method for producing the same480US 5,559,046 AMatsushita Electronics Corporation · 1996
- Silicon carbide metal-semiconductor field effect transistors81US 6,686,616 B1Cree, Inc. · 2004
- Self-aligned field-effect transistor for high frequency applications69US 5,686,737 ACree Research, Inc. · 1997
- Semiconductor device with refractory metal element68US 6,013,926 AMitsubishi Denki Kabushiki Kaisha · 2000
- Recessed gate field effect transistor56US 5,675,159 AMitsubishi Denki Kabushiki Kaisha · 1997