Nitride semiconductor device with field effect gate
AssigneeSamsung Electronics Co., Ltd.
InventorsWoochul Jeon, Jongseob Kim, Jaejoon Oh, Younghwan Park
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Abstract
A nitride semiconductor device having a field effect gate is disclosed. The disclosed nitride semiconductor device includes a high-resistance material layer including a Group III-V compound semiconductor, a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type, a channel layer on the channel layer control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type, and a gate electrode having a contact of an ohmic contact type with the first channel control layer.
Claims20
A nitride semiconductor device comprising:
- a high-resistance material layer including a Group III-V compound semiconductor;
- a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type;
- a channel layer on the first channel control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type;
- and
- a gate electrode surrounding the first channel control layer and the channel layer, the gate electrode having a contact of an ohmic contact type with the first channel control layer.
A nitride semiconductor device comprising:
- a high-resistance material layer including a Group III-V compound semiconductor;
- a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type;
- a channel layer on the first channel control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type;
- a gate electrode, the gate electrode having a contact of an ohmic contact type with the first channel control layer;
- and
- a second channel control layer on the channel layer and including a Group III-V compound semiconductor of the first conductivity type,
- wherein the first channel control layer, the channel layer and the second channel control layer correspond to a stack structure, and
- the gate electrode surrounds the stack structure or has a contact of an ohmic contact type with at least one of the first channel control layer and the second channel control layer.
A nitride semiconductor device comprising:
- a high-resistance material layer including a Group III-V compound semiconductor;
- a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type;
- a channel layer on the first channel control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type;
- a gate electrode, the gate electrode having a contact of an ohmic contact type with the first channel control layer;
- and
- wherein the first channel control layer and the channel layer have a stack structure, and
- the gate electrode surrounds the stack structure or has a contact of an ohmic contact type with the first channel control layer,
- wherein the first channel control layer includes a plurality of protrusions having stripe shape, and
- the channel layer is respectively on a plurality of protrusions of the first channel control layer, and includes a plurality of stack structure arrays.
Dependencies are inferred from the claim text.