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US 6,013,926 AGranted
Semiconductor device with refractory metal element
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTomoki Oku, Naohito Yoshida, Shinichi Miyakuni, Toshihiko Shiga
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Abstract
A semiconductor device includes a self-aligned refractory metal constituent in a recess in a semiconductor substrate and having the same plane pattern as a bottom surface of the recess. The width of the constituent is determined by the plane pattern of the recess and, accordingly, the pattern width of the constituent is easily controlled by the plane pattern of the recess.
Claims5
A semiconductor device comprising:
- a semiconductor substrate having a surface and a recess at the surface, the recess having a bottom surface and side walls transverse to the bottom surface, the semiconductor substrate further comprising a channel region at the bottom surface of the recess, and source and drain regions located at opposite sides of the recess and in the semiconductor substrate;
- and
- a refractory metal material gate electrode having a varying thickness including a first thickness at a central location between the side walls of the recess, the thickness gradually decreasing from the first thickness toward the side walls, the gate electrode covering and contacting the bottom surface and the side walls of the recess.
A semiconductor device comprising:
- a semiconductor substrate;
- a channel layer in the semiconductor substrate;
- an electron supply layer on the channel layer in the semiconductor substrate;
- a gate electrode on the electron supply layer;
- a contact layer located in each of two regions, the regions being located at opposite sides of and spaced from the gate electrode, on the electron supply layer;
- an insulating film on the contact layer in each of the two regions and having first and second openings located on opposite sides of the gate electrode, exposing the contact layer, and a third opening exposing the gate electrode;
- and
- refractory metal material source and drain ohmic electrodes respectively disposed on the contact layer in the first and second openings of the insulating film, the source and drain electrodes having respective varying thicknesses including respective first thicknesses centrally located in the first and second openings, the respective thicknesses of the source and drain electrodes decreasing with distance from the respective first thicknesses.
5 more elements
Dependencies are inferred from the claim text.