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US 11,145,735 B2Granted
Ohmic alloy contact region sealing layer
AssigneeRaytheon Company
InventorsPaul J. Duval, John P. Bettencourt, James W. McClymonds, Paul M. Alcorn, Philip C. Balas, II, Michael S. Davis
Life of this patent
Estimating the term…
Abstract
Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.
Claims13
A Field Effect Transistor (FET) comprising:
- a source contact in ohmic contact with a surface of an upper semiconductor layer;
- a drain contact in ohmic contact with the surface of the upper semiconductor layer;
- wherein the upper semiconductor layer has a notch in the surface of the semiconductor layer between the source contact and the drain contact, the notch terminating in a lower semiconductor layer;
- a gate contact disposed in the notch and in contact with the lower semiconductor layer;
- and
- an ohmic contact sealing layer disposed at:
- (a) an intersection between a sidewall of the source contact and the surface of the upper semiconductor layer;
- and (b) an intersection between a sidewall of the drain contact and the surface of the upper semiconductor layer;
- wherein the ohmic contact sealing layer is spaced from the gate contact by a gap in the ohmic contact sealing layer between the source contact and the gate contact and a gap between the drain contact and the gate contact;
- and
- wherein the ohmic contact sealing layer comprises a non-single crystal material.
8 more elements
A Field Effect Transistor (FET), comprising:
- a semiconductor;
- a source contact in ohmic contact with a first portion of a surface of the semiconductor;
- a drain contact in ohmic contact with a second portion of the surface of the semiconductor;
- a gate contact, disposed between the source contact and the drain contact, comprising a ohmic contact sealing, gate metal having a first portion disposed in Schottky contact with a third portion of the surface of the semiconductor, such third portion of the surface of the semiconductor being laterally spaced from both the first portion and the second portion of the surface of the semiconductor;
- wherein the ohmic contact sealing, gate metal has a second portion disposed at an intersection of a sidewall of the source contact and the first portion of the surface of the semiconductor;
- wherein the ohmic contact sealing, gate metal has a third portion disposed at an intersection between a sidewall of the drain contact and the second portion of the surface of the semiconductor;
- and
- wherein the second portion of the ohmic contact sealing, gate metal and the third portion of the ohmic contact sealing, gate metal are laterally spaced from the first portion of the gate metal.
5 more elements
Dependencies are inferred from the claim text.