Semiconductor device

A semiconductor device comprising”

• a semiconductor layer provided on a substrate and including a channel layer;
• a source region connected to the channel layer and having a sheet resistance smaller than a sheet resistance of the channel layer;
• a drain region connected to the channel layer and having a sheet resistance smaller than the sheet resistance of the channel layer;
• a plurality of gates provided between the source region and the drain region, arranged in a direction intersecting an arrangement direction of the source region and the drain region, and embedded from an upper surface of the semiconductor layer to at least the channel layer;
• wherein a part of the source region has a convexity that faces a region between two adjacent gates among the plurality of gates, and protrudes toward a part of the drain region through the region between the two adjacent gates, and
• wherein a width of the convexity narrows from the part of the source region toward the drain region.