Gate structure and method for producing same

A gate structure comprising:

• a substrate;
• an active layer disposed on the substrate;
• an intermediate layer disposed on the active layer, wherein the intermediate layer has a recess extending through the entire intermediate layer towards the active layer, the intermediate layer is a passivation layer, the intermediate layer comprises at least a first intermediate layer and a second intermediate layer;
• a contact element which is arranged inside the recess, wherein the contact element completely fills the recess and extends to above the intermediate layer, wherein the contact element rests directly on the intermediate layer at least in sections or the contact element is separated from the active layer and the intermediate layer by a dielectric cladding,
• wherein the contact element is made of a Schottky metal having an interior cavity completely enclosed by the Schottky metal,
• wherein the contact element contacts the active layer directly, and
• wherein the contact element above the intermediate layer is directly covered by a gate metal and the contact element with the gate metal above the intermediate layer is completely surrounded by a dielectric covering layer;
• and
• a dielectric layer disposed directly between the active layer and the intermediate layer, the contact element directly contacting the dielectric layer.

A gate structure comprising:

• a substrate;
• an active layer disposed on the substrate;
• an intermediate layer disposed on the active layer, wherein the intermediate layer has a recess extending through the entire intermediate layer towards the active layer;
• and
• a contact element which is arranged inside the recess, wherein the contact element completely fills the recess and extends to above the intermediate layer, wherein the contact element rests directly on the intermediate layer at least in sections or the contact element is separated from the active layer and the intermediate layer by a dielectric cladding,
• wherein the contact element is made of a Schottky metal having an interior cavity completely enclosed by the Schottky metal, and
• wherein the contact element above the intermediate layer is directly covered by a gate metal and the contact element with the gate metal above the intermediate layer is completely surrounded by a dielectric covering layer.