Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices

A semiconductor device structure, comprising:

• a region of semiconductor material comprising an active region, a first conductivity type, a first major surface, and a second major surface opposite to the first major surface;
• trench gate structures comprising:
• trenches extending from the first major surface into the region of semiconductor material;
• first dielectric structures over sidewall surfaces and a portion of a lower surface of each trench, wherein each first dielectric structure comprises an opening adjacent to the lower surface;
• recessed contacts extending through the openings;
• and
• first contact regions over the recessed contacts within the trenches, wherein the recessed contacts and the first contact regions comprise different materials;
• doped regions comprising a second dopant conductivity type opposite to the first conductivity type in the region of semiconductor material spaced apart from the first major surface and below the trenches;
• and
• gate contact regions in the active region of region of semiconductor material electrically coupled to the doped regions, wherein:
• at least first portions of the recessed contacts are electrically coupled to the doped regions;
• and
• the first contact regions comprise a Schottky barrier material.

A method of forming a semiconductor device comprising:

• providing a region of semiconductor material comprising an active region, a first conductivity type, a first major surface, and a second major surface opposite to the first major surface;
• providing trench gate structures comprising:
• trenches extending from the first major surface into the region of semiconductor material;
• first dielectric structures over sidewall surfaces and a portion of a lower surface of each trench, wherein each first dielectric structure comprises an opening adjacent to the lower surface;
• recessed contacts extending through the openings;
• and
• first contact regions over the recessed contacts within the trenches, wherein the recessed contacts and the first contact regions comprise different materials;
• providing doped regions comprising a second dopant conductivity type opposite to the first conductivity type in the region of semiconductor material spaced apart from the first major surface and below the trenches;
• and
• providing gate contact regions in the active region of region of semiconductor material electrically coupled to the doped regions, wherein:
• at least first portions of the recessed contacts are electrically coupled to the doped regions.