H10D 30/873
Having multiple gate electrodes
Official title: {having multiple gate electrodes}
H10D30/873 (Having multiple gate electrodes) appears on 102 US grants and 45 published applications in this corpus.
Search patents in H10D- Granted patents
- 102
- Published applications
- 45
- Assignees
- 65
- Inventors
- 200
- Latest grant
- 19 Apr 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 8 | 0 |
| 1991 | 8 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 6 | 0 |
| 1995 | 3 | 0 |
| 1996 | 0 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 4 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 3 |
| 2010 | 1 | 6 |
| 2011 | 3 | 4 |
| 2012 | 1 | 1 |
| 2013 | 4 | 1 |
| 2014 | 5 | 1 |
| 2015 | 5 | 7 |
| 2016 | 1 | 2 |
| 2017 | 3 | 4 |
| 2018 | 3 | 1 |
| 2019 | 0 | 3 |
| 2020 | 4 | 3 |
| 2021 | 1 | 1 |
| 2022 | 2 | 0 |
| 2023 | 0 | 1 |
| 2024 | 0 | 2 |
| 2025 | 0 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
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- Display device and manufacturing method thereof15 Dec 2020US 10,868,049 B2Samsung Display Co., Ltd.
- High-frequency transistor25 Aug 2020US 10,756,165 B2Panasonic Semiconductor Solutions Co., Ltd.
- Thermally Stable FinFET Device for High Temperature Operation31 Jul 2025US 2025/0248064 A1Wolfspeed, Inc.
- Semiconductor device20 Mar 2025US 2025/0098298 A1Kabushiki Kaisha Toshiba
- Nanotube semiconductor device and shear force sensor including the same27 Jun 2024US 2024/0215452 A1Foundation of Soongsil University-Industry Cooperation
- Normally-off mesfet device with stacked gate contact1 Feb 2024US 2024/0038869 A1III-V Technologies GmbH
- Multi-terminal gallium nitride power transistor2 Nov 2023US 2023/0352542 A1Huawei Technologies Co., Ltd.
Most cited
By later US patents
- Field effect transistor93US 6,160,280 AMotorola, Inc. · 2000
- Method of forming an interband lateral resonant tunneling transistor65US 5,804,475 AThe United States of America as represented by the Secretary of the Navy · 1998
- Fabrication method for a dual gate field-effect transistor53US 4,040,168 ARCA Corporation · 1977
- Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits35US 4,899,200 ARegents of the University of Minnesota · 1990
- Field effect transistor30US 4,315,272 ARaytheon Company · 1982