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US 4,315,272 AGranted
Field effect transistor
AssigneeRaytheon Company
InventorJames L. Vorhaus
Life of this patent
Estimating the term…
Abstract
A field effect transistor is provided wherein a semiconductor body has a central source region and a plurality of drain regions disposed about the periphery of the central source region. A gate region, common to at least a portion of the plurality of drain regions, is also formed in the body. With such arrangement an efficient multi-drain field effect transistor is provided through the use of a central source electrode formed on the semiconductor body.
Claims2
A field effect transistor comprising:
- (a) a semiconductor;
- (b) a central electrode means in contact with such semiconductor for providing a central region in the semiconductor for the device;
- (c) a plurality of separate, electrically independent electrode means in contact with such semiconductor for providing a plurality of electrically independent regions in the semiconductor disposed about the periphery of the central region;
- (d) a common gate electrode means for controlling a flow of carriers in the semiconductor between the central region and a plurality of the electrically independent regions;
- and
- (e) a plurality of separate, electrically independent gate electrode means, each one of such separate gate electrode means being adapted to control a flow of carriers in the semiconductor between the common region and a corresponding one of the plurality of electrically independent regions.
3 more elements
A field effect transistor comprising:
- (a) a semiconductor;
- (b) a plurality of separate means in contact with the semiconductor for providing a plurality of electrically independent regions in the semiconductor;
- (c) a central electrode means in contact with the semiconductor for providing a central region in the semiconductor for the transistor, the electrically independent regions being disposed about the periphery of the central region;
- (d) a common gate electrode disposed between the common electrode and at least a portion of the plurality of separate electrodes;
- and
- (e) a plurality of separate electrically independent gate electrodes disposed between the common electrode and corresponding ones of the separate electrodes.
3 more elements
Dependencies are inferred from the claim text.