Semiconductor device

A semiconductor device, comprising:

• a support body including a first surface;
• a major element located on the support body;
• and
• a control element located on the support body, the control element controlling the major element,
• the major element including
• a first electrode,
• a second electrode positioned to be separated from the first electrode in a first direction, the first direction being along the first surface,
• a first semiconductor layer located between the first electrode and the second electrode in the first direction, the first semiconductor layer forming a first Schottky junction with the second electrode, and
• a first gate electrode facing the first Schottky junction in a second direction, the second direction being along the first surface and crossing the first direction,
• the control element including
• a third electrode,
• a fourth electrode positioned to be separated from the third electrode in a fourth direction, the fourth direction being along the first surface,
• a second semiconductor layer located between the third electrode and the fourth electrode in the fourth direction, the second semiconductor layer forming a second Schottky junction with the fourth electrode, and
• a second gate electrode facing the second Schottky junction in a fifth direction, the fifth direction being along the first surface and crossing the fourth direction.