H10D 30/871
Vertical fets having schottky gate electrodes
Official title: {Vertical FETs having Schottky gate electrodes (Vertical SIT or PBT H10D30/202)}
H10D30/871 (Vertical fets having schottky gate electrodes) appears on 123 US grants and 71 published applications in this corpus.
Search patents in H10D- Granted patents
- 123
- Published applications
- 71
- Assignees
- 88
- Inventors
- 256
- Latest grant
- 11 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 4 | 0 |
| 1985 | 0 | 0 |
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| 1987 | 6 | 0 |
| 1988 | 2 | 0 |
| 1989 | 6 | 0 |
| 1990 | 2 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 4 | 0 |
| 1995 | 4 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 2 |
| 2002 | 2 | 0 |
| 2003 | 1 | 3 |
| 2004 | 3 | 0 |
| 2005 | 3 | 2 |
| 2006 | 3 | 3 |
| 2007 | 2 | 4 |
| 2008 | 3 | 3 |
| 2009 | 2 | 1 |
| 2010 | 1 | 3 |
| 2011 | 4 | 2 |
| 2012 | 2 | 2 |
| 2013 | 3 | 3 |
| 2014 | 1 | 4 |
| 2015 | 6 | 8 |
| 2016 | 4 | 1 |
| 2017 | 2 | 6 |
| 2018 | 3 | 1 |
| 2019 | 4 | 2 |
| 2020 | 0 | 2 |
| 2021 | 4 | 2 |
| 2022 | 2 | 6 |
| 2023 | 2 | 3 |
| 2024 | 2 | 2 |
| 2025 | 3 | 5 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Vertical trench device configurations for radiation-environment applications11 Nov 2025US 12,469,705 B2SCDevice LLC
- Nitride semiconductor device1 Apr 2025US 12,266,730 B2Panasonic Holdings Corporation
- Semiconductor structure and manufacturing method for the same25 Mar 2025US 12,262,547 B2Enkris Semiconductor, Inc.
- High-threshold power semiconductor device and manufacturing method thereof1 Oct 2024US 12,107,167 B2Southeast University
- Methods of manufacturing vertical device20 Feb 2024US 11,908,686 B2Enkris Semiconductor, Inc.
- Trench field-effect transistor (fet)14 May 2026US 2026/0136608 A1Semiconductor Components Industries, LLC
- Thermally Stable FinFET Device for High Temperature Operation31 Jul 2025US 2025/0248064 A1Wolfspeed, Inc.
- Nitride semiconductor device12 Jun 2025US 2025/0194166 A1Panasonic Holdings Corporation
- Semiconductor device20 Mar 2025US 2025/0096129 A1Kabushiki Kaisha Toshiba
- Semiconductor device20 Mar 2025US 2025/0098298 A1Kabushiki Kaisha Toshiba
Most cited
By later US patents
- Silicon carbide switching device with rectifying-gate174US 5,396,085 ANorth Carolina State University · 1995
- Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure122US 7,615,802 B2SiCED Electronics Development GmbH & Co. KG · 2009
- FET having part of active region formed in semiconductor layer in through hole formed in gate electrode and method for manufacturing the same115US 5,599,724 AKabushiki Kaisha Toshiba · 1997
- Vertical transistor device fabricated with semiconductor regrowth80US 5,106,778 AMassachusetts Institute of Technology · 1992
- Pinch rectifier78US 4,641,174 AGeneral Electric Company · 1987