Semiconductor structure and manufacturing method for the same
AssigneeEnkris Semiconductor, Inc.
InventorKai Cheng
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Abstract
The present application provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first n-type semiconductor layer, a p-type semiconductor layer, and a second n-type semiconductor layer which are stacked. A buried layer made of AlGaN is disposed in the first n-type semiconductor layer. A trench at least penetrates through the second n-type semiconductor layer and the p-type semiconductor layer. At least part of the buried layer is reserved below the trench. A gate electrode is in the trench. The method is used to manufacture this semiconductor structure.
Claims18
A semiconductor structure, comprising:
- a first n-type semiconductor layer, a p-type semiconductor layer, and a second n-type semiconductor layer which are stacked, wherein the first n-type semiconductor layer comprises a first n-type semiconductor sub-layer, a buried layer, and a second n-type semiconductor sub-layer which are sequentially stacked, and the buried layer is made of AlGaN;
- a trench, wherein the trench at least penetrates through the second n-type semiconductor layer and the p-type semiconductor layer, and at least part of the buried layer is below a bottom of the trench;
- and
- a gate electrode disposed in the trench;
- wherein an Al content in the buried layer increases from bottom to top along a growth direction of the buried layer.
Dependencies are inferred from the claim text.