Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

A semiconductor configuration for controlling a current (I), comprising:

• a first semiconductor region of a first conductivity type;
• an island region of a second conductivity type, opposite said first conductivity type, at least partially buried within the said first semiconductor region;
• a first contact region of the first conductivity type disposed on a first surface of said first semiconductor region or embedded in said island region;
• a first electrode contacting at least one of said island region and said first contact region;
• a second electrode disposed opposite from said first electrode on said first semiconductor region;
• means for generating a first depletion zone within said first semiconductor region and disposed vertically above said island region and partially overlapping same in a projection thereof and forming a lateral channel region in said first semiconductor region;
• said lateral channel region forming a portion of a current path between said first and second electrodes and being vertically limited by said first depletion zone and a second depletion zone, wherein said second depletion zone is formed by a p-n transition between said island region and said first semiconductor region;
• a zone of the first conductivity type formed in said first semiconductor region and extending into said lateral channel region, said zone having a higher doping in a vertical direction that a remaining lateral channel region.