Vertical trench device configurations for radiation-environment applications
AssigneeSCDevice LLC
InventorsSudarsan Uppili, David Lee Snyder, Scott Joseph Alberhasky
Life of this patent
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Abstract
Semiconductor devices and associated fabrication methods are disclosed. In one disclosed approach a process for forming a semiconductor device is provided. The process includes: implanting a first region of semiconductor material using a first channeled implant with a first conductivity type; and implanting, after the first channeled implant, a second region of semiconductor material using a second channeled implant with a second conductivity type. The first channeled implant disrupts a crystal structure of the first region of semiconductor material and does not disrupt a crystal structure of the second region of semiconductor material.
Claims20
A process for forming a semiconductor device, with a well region, comprising:
- implanting a first region of semiconductor material using a first implant and a first mask;
- forming, after the first implant, at least one spacer on the first mask;
- and
- forming a trench in the first region of semiconductor material using the at least one spacer and the first mask;
- wherein the well region of the semiconductor device occupies at least a portion of the first region of semiconductor material that was implanted with the first implant.
A process for forming a semiconductor device comprising:
- implanting a first region of semiconductor material using a first channeled implant with a first conductivity type;
- implanting, after the first channeled implant, a second region of semiconductor material using a second channeled implant with a second conductivity type;
- wherein the first channeled implant disrupts a crystal structure of the first region of semiconductor material and does not disrupt a crystal structure of the second region of semiconductor material.
A process for forming a semiconductor device, with a well region and a junction field effect region, comprising:
- implanting a first region of semiconductor material using a first non-channeled implant with a first conductivity type;
- forming, after the first non-channeled implant, a trench in the first region of semiconductor material;
- and
- implanting, after forming the trench, a second region of semiconductor material using a second channeled implant with a second conductivity type;
- wherein the well region of the semiconductor device occupies at least a portion of the first region of semiconductor material that was implanted with the first non-channeled implant, the junction field effect region of the semiconductor device occupies at least a portion of the second region of semiconductor material that was implanted with the second channeled implant, and the portion of the first region of semiconductor material has a higher dopant concentration than the portion of the second region of semiconductor material.
Dependencies are inferred from the claim text.