Semiconductor device

A semiconductor device, comprising:

• a first conductive part;
• a second conductive part separated from the first conductive part in a first direction;
• a third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction;
• a first insulating part including a first insulating region located between the third conductive part and the portion of the second conductive part;
• and
• a semiconductor part of a first conductivity type, the semiconductor part including
• a first semiconductor region located between the first conductive part and the second conductive part, and
• a second semiconductor region located between the first insulating region and the portion of the second conductive part, the second semiconductor region having a Schottky junction with the second conductive part,
• a first impurity being segregated at an interface between the second conductive part and the second semiconductor region,
• the first conductivity type being an n-type, and the first impurity including at least one selected from the group consisting of boron, indium, aluminum, and beryllium, or
• the first conductivity type being a p-type, and the first impurity including at least one selected from the group consisting of arsenic, phosphorus, antimony, and magnesium.