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US 12,751,048 B2Granted
Semiconductor element and production method for same
AssigneesTamura Corporation, National Institute of Information and Communications Technology
InventorsKohei Sasaki, Masataka Higashiwaki, Man Hoi Wong
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Abstract
A semiconductor element includes a high-resistivity substrate that includes a β-Ga2O3-based single crystal including an acceptor impurity, an undoped β-Ga2O3-based single crystal layer formed on the high-resistivity substrate, and an n-type channel layer that includes a side surface surrounded by the undoped β-Ga2O3-based single crystal layer. The undoped β-Ga2O3-based single crystal layer includes an element isolation region.
Claims9
A semiconductor device, comprising:
- a high resistivity substrate formed of a β-Ga2O3-based single crystal doped with an acceptor impurity;
- a β-Ga2O3-based single crystal layer consisting of only one epitaxial layer formed of undoped β-Ga2O3-based single crystal on a principal surface of the high resistivity substrate;
- and
- plural of transistor elements each having a channel region buried in a surface portion of the β-Ga2O3-based single crystal layer to be spaced from each other,
- wherein the channel region is electrically isolated from an adjacent channel region of an adjacent transistor element by the undoped β-Ga2O3-based single crystal, and
- wherein the channel region is formed of a β-Ga2O3-based single crystal doped with Si.
3 more elements
Dependencies are inferred from the claim text.