H10D 30/019
Of fets having stacked nanowire, nanosheet or nanoribbon channels
Official title: {of FETs having stacked nanowire, nanosheet or nanoribbon channels}
H10D30/019 (Of fets having stacked nanowire, nanosheet or nanoribbon channels) appears on 4,633 US grants and 8,279 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,633
- Published applications
- 8,279
- Assignees
- 241
- Inventors
- 4,714
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 2 | 1 |
| 2003 | 0 | 0 |
| 2004 | 2 | 3 |
| 2005 | 1 | 10 |
| 2006 | 5 | 6 |
| 2007 | 6 | 5 |
| 2008 | 6 | 10 |
| 2009 | 3 | 12 |
| 2010 | 10 | 10 |
| 2011 | 6 | 17 |
| 2012 | 15 | 13 |
| 2013 | 14 | 30 |
| 2014 | 27 | 57 |
| 2015 | 49 | 70 |
| 2016 | 105 | 108 |
| 2017 | 140 | 179 |
| 2018 | 158 | 185 |
| 2019 | 237 | 257 |
| 2020 | 268 | 440 |
| 2021 | 360 | 585 |
| 2022 | 470 | 972 |
| 2023 | 519 | 1377 |
| 2024 | 691 | 1437 |
| 2025 | 1005 | 1513 |
| 2026 | 534 | 982 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Wrap around backside source/drain contact6 Oct 2026US 12,757,469 B2International Business Machines Corporation
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- 3D source and drain contacts tuned for vertically stacked PMOS and NMOS22 Sep 2026US 12,745,428 B2Intel Corporation
- Structure with self-aligned offset gate contact and direct backside contact8 Sep 2026US 12,733,240 B2International Business Machines Corporation
- Semiconductor device including inclined channel layer and electronic device including the semiconductor device1 Sep 2026US 12,727,190 B2Samsung Electronics Co., Ltd.
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with conductive contact8 Oct 2026US 2026/0313986 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Germanium FinFETs with metal gates and stressors556US 9,245,805 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor device and method355US 10,510,871 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Uniformity tuning of variable-height features formed in trenches349US 10,332,963 B1Globalfoundries Inc. · 2019
- High density nanosheet diodes304US 9,842,835 B1International Business Machines Corporation · 2017