H10D 30/0195
Forming inner spacers between adjacent channels
Official title: {forming inner spacers between adjacent channels, e.g. changing their shapes or sizes}
H10D30/0195 (Forming inner spacers between adjacent channels) appears on 685 US grants and 1,299 published applications in this corpus.
Search patents in H10D- Granted patents
- 685
- Published applications
- 1,299
- Assignees
- 49
- Inventors
- 1,365
- Latest grant
- 29 Sep 2026
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| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
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| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
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| 2016 | 3 | 2 |
| 2017 | 8 | 20 |
| 2018 | 18 | 31 |
| 2019 | 40 | 40 |
| 2020 | 39 | 59 |
| 2021 | 62 | 96 |
| 2022 | 63 | 153 |
| 2023 | 93 | 227 |
| 2024 | 110 | 193 |
| 2025 | 162 | 299 |
| 2026 | 86 | 174 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for forming a semiconductor device by recessing semiconductor layers and inner spacers29 Sep 2026US 12,751,079 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Nanosheet channel formation method and structure25 Aug 2026US 12,720,785 B2Taiwan Semicondutor Manufacturing Co.
- Semiconductor device and method of manufacturing same25 Aug 2026US 12,720,786 B2Samsung Electronics Co., Ltd.
- Lightly-doped channel extensions25 Aug 2026US 12,720,811 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor source/drain regions and methods of forming the same25 Aug 2026US 12,720,823 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including additional gate insulation pattern1 Oct 2026US 2026/0304822 A1Samsung Electronics Co., Ltd.
- Multi-gate transistor24 Sep 2026US 2026/0293297 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-gate device and manufacturing method thereof17 Sep 2026US 2026/0282413 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistors and the methods of forming the same10 Sep 2026US 2026/0271321 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Orthogonal inner spacer20 Aug 2026US 2026/0247652 A1International Business Machines Corporation
Most cited
By later US patents
- Spacers for nanowire-based integrated circuit device and method of fabricating same128US 10,475,902 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Buffer regions for blocking unwanted diffusion in nanosheet transistors76US 10,263,100 B1International Business Machines Corporation · 2019
- Gate-all-around nanosheet field-effect transistors and methods of manufacturing the same63US 10,008,583 B1Samsung Electronics Co., Ltd. · 2018
- Inner spacer formation for nanosheet field-effect transistors with tall suspensions60US 10,014,390 B1Globalfoundries Inc. · 2018
- Self-aligned air gap spacer for nanosheet CMOS devices53US 9,954,058 B1International Business Machines Corporation · 2018