H10D 30/0197
The inner spacers having different properties
Official title: {the inner spacers having different properties}
H10D30/0197 (The inner spacers having different properties) appears on 53 US grants and 114 published applications in this corpus.
Search patents in H10D- Granted patents
- 53
- Published applications
- 114
- Assignees
- 12
- Inventors
- 275
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2017 | 0 | 1 |
| 2018 | 1 | 0 |
| 2019 | 0 | 1 |
| 2020 | 1 | 6 |
| 2021 | 7 | 14 |
| 2022 | 9 | 14 |
| 2023 | 9 | 17 |
| 2024 | 8 | 10 |
| 2025 | 15 | 32 |
| 2026 | 3 | 19 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- FinFET device with partial interface dipole formation for reduction of gate induced drain leakage26 May 2026US 12,641,818 B2International Business Machines Corporation
- Lattice stack for internal spacer fabrication26 May 2026US 12,641,850 B2Intel Corporation
- Method of forming transistors of different configurations10 Feb 2026US 12,550,358 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a vertically stacked channel pattern and method for manufacturing the same18 Nov 2025US 12,477,796 B2Samsung Electronics Co., Ltd.
- Semiconductor transistor devices having double-sided interconnect structures21 Oct 2025US 12,453,114 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-gate transistor24 Sep 2026US 2026/0293297 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Orthogonal inner spacer20 Aug 2026US 2026/0247652 A1International Business Machines Corporation
- High-k/metal gate ldmos nanosheet device2 Jul 2026US 2026/0190380 A1
- Semiconductor device and semiconductor device manufacturing method21 May 2026US 2026/0143737 A1Samsung Electronics Co., Ltd.
- Semiconductor devices and methods of manufacturing thereof14 May 2026US 2026/0136583 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Self-aligned etch in semiconductor devices6US 11,342,326 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022
- Methods for producing nanowire stack GAA device with inner spacer5US 10,930,498 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2021
- Structure and method for semiconductor devices4US 11,239,335 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022
- Uniform gate width for nanostructure devices4US 11,315,925 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022
- Semiconductor device and method of manufacturing the same3US 10,014,393 B2Samsung Electronics Co., Ltd. · 2018