Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Min Song, Dong Chan Suh, Jung Gil Yang, Geum Jong Bae, Woo Bin Song
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Abstract
A method of manufacturing semiconductor device includes forming a plurality of sacrificial layers and a plurality of semiconductor layers repeatedly and alternately stacked on a substrate, partially removing the sacrificial layers, forming spacers in removed regions of the sacrificial layers, and replacing remaining portions of the sacrificial layers with a gate electrode. Each of the sacrificial layers includes first portions disposed adjacent to the plurality of semiconductor layers and a second portions disposed between the first portions. The second portion having a different composition from the first portions.
Claims15
A method of manufacturing a semiconductor device, the method comprising:
- forming a plurality of sacrificial layers and a plurality of semiconductor layers on a substrate, the semiconductor layers and the sacrificial layers being repeatedly and alternately stacked on the substrate;
- partially removing the sacrificial layers;
- forming spacers in removed regions of the sacrificial layers;
- and
- replacing remaining portions of the sacrificial layers with a gate electrode,
- wherein each of the sacrificial layers includes first portions disposed adjacent to the semiconductor layers and a second portion disposed between the first portions, the second portion having a different composition from the first portions,
- wherein the sacrificial layers include silicon germanium, and a germanium content of the first portions is higher than a germanium content of the second portion, and
- wherein the first portions include impurities.
A method of manufacturing a semiconductor device, the method comprising:
- forming, on a substrate, a fin structure in which a plurality of sacrificial patterns and a plurality of semiconductor patterns are alternately stacked on each other, wherein each of the sacrificial patterns includes a first portion disposed adjacent to each of the plurality of semiconductor patterns and a second portion having a different composition from the first portion;
- forming a dummy gate on the fin structure;
- forming a first spacer on opposite sidewalls of the dummy gate;
- etching the sacrificial patterns and the semiconductor patterns using the dummy gate and the first spacer as an etch mask to form a plurality of sacrificial sheets and a plurality of nanosheets;
- etching sidewalls of the sacrificial sheets to form a spacer space;
- forming a second spacer in the spacer space;
- forming a source/drain region connected to the nanosheets;
- removing the dummy gate and the sacrificial sheets;
- forming a gate insulating layer;
- and
- forming a gate electrode,
- wherein each of the sacrificial patterns include silicon germanium, and a germanium content of the first portions is about 5% to about 10% higher than a germanium content of the second portion.
A method of manufacturing a semiconductor device, the method comprising:
- forming a stacked structure disposed on a substrate, the stacked structure including a plurality of semiconductor layers and a plurality of sacrificial layers repeatedly and alternately stacked, wherein sidewalls of the sacrificial layers have a concave shape structure;
- forming spacers in spaces provided by the concave shape structures;
- removing the sacrificial layers to form openings;
- and
- forming a gate electrode in the openings,
- wherein each of the sacrificial layers includes first portions disposed adjacent to the semiconductor layers and a second portion disposed between the first portions, the second portion having a different composition from at least one of the first portions, and
- wherein a depth of the concave shape structure is less than about 2 nm.
Dependencies are inferred from the claim text.