H10D 30/0196
By modifying properties of the inner spacers
Official title: {by modifying properties of the inner spacers}
H10D30/0196 (By modifying properties of the inner spacers) appears on 88 US grants and 196 published applications in this corpus.
Search patents in H10D- Granted patents
- 88
- Published applications
- 196
- Assignees
- 19
- Inventors
- 372
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 3 | 5 |
| 2019 | 5 | 4 |
| 2020 | 5 | 11 |
| 2021 | 8 | 12 |
| 2022 | 10 | 23 |
| 2023 | 14 | 24 |
| 2024 | 15 | 25 |
| 2025 | 18 | 49 |
| 2026 | 9 | 40 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Self-aligned air gap spacer for nanosheet CMOS devices53US 9,954,058 B1International Business Machines Corporation · 2018
- Full air-gap spacers for gate-all-around nanosheet field effect transistors19US 10,553,696 B2International Business Machines Corporation · 2020
- Self-aligned air gap spacer for nanosheet CMOS devices14US 10,243,043 B2International Business Machines Corporation · 2019
- Uniform low-k inner spacer module in gate-all-around (GAA) transistors14US 10,243,060 B2International Business Machines Corporation · 2019
- Semiconductor device and method of fabricating the same11US 10,008,575 B2Samsung Electronics Co., Ltd. · 2018