Uniform low-k inner spacer module in gate-all-around (GAA) transistors
AssigneeInternational Business Machines Corporation
InventorsRobin H. Chao, ChoongHyun Lee, Chun W. Yeung, Jingyun Zhang
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Abstract
Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having uniform low-k inner spacers. A nanosheet stack is formed opposite a major surface of a substrate. The nanosheet stack includes multiple nanosheets. Cavities are formed between adjacent ones of the multiple nanosheets. The cavities are filled with an oxide material and portions of the oxide material are nitridized to form inner spacers positioned between the adjacent ones of the multiple nanosheets.
Claims20
A method for forming a semiconductor device, the method comprising:
- forming a nanosheet stack opposite a major surface of a substrate, the nanosheet stack comprising multiple nanosheets;
- forming cavities between adjacent nanosheets of the multiple nanosheets;
- filling the cavities with an oxide material;
- and
- nitridizing end portions of the oxide material to form inner spacers positioned between the adjacent nanosheets of the multiple nanosheets.
A method for forming a semiconductor device, the method comprising:
- forming a nanosheet stack opposite a major surface of a substrate, the nanosheet stack comprising multiple nanosheets;
- forming cavities between adjacent nanosheets of the multiple nanosheets;
- filling the cavities with a first oxide material;
- nitridizing end portions of the first oxide material to form a first portion of an inner spacer positioned between the adjacent nanosheets of the multiple nanosheets;
- forming a second oxide material adjacent to the first portion of the inner spacer;
- and
- nitridizing end portions of the second oxide material to form a second portion of the inner spacer positioned between the adjacent nanosheets of the multiple nanosheets.
A semiconductor device comprising:
- a nanosheet stack formed opposite a major surface of a substrate, the nanosheet stack comprising a first nanosheet vertically stacked over a second nanosheet;
- a conductive gate formed over a channel region of the first and second nanosheets;
- and
- a nitridized inner spacer positioned between the first and second nanosheets and adjacent to the conductive gate, wherein the inner space is a uniform low-k inner spacer.
Dependencies are inferred from the claim text.