Semiconductor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBo-Feng Young, Sai-Hooi Yeong, Chi-On Chui
Life of this patent
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Abstract
Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a plurality of semiconductor nanosheets, a bottom dielectric layer, and a gate stack. The substrate includes at least one fin. The plurality of semiconductor nanosheets are stacked on the at least one fin. The bottom dielectric layer is vertically disposed between the at least one fin and the plurality of semiconductor nanosheets. The gate stack wraps the plurality of semiconductor nanosheets. An area of the gate stack projected on a top surface of the substrate is within an area of the bottom dielectric layer projected on the top surface of the substrate.
Claims20
A semiconductor device, comprising:
- a substrate comprising at least one fin;
- a gate structure disposed over the substrate;
- a first source/drain (S/D) region disposed over the substrate at a first side of the gate structure;
- a second S/D region disposed over the substrate at a second side of the gate structure;
- a bottom dielectric layer disposed between the gate structure and the substrate and extending continuously along an extending direction of the fin from directly under the first S/D region across the gate structure to directly below the second S/D region with the same thickness;
- and
- a bottom semiconductor layer disposed aside and in contact with the bottom dielectric layer.
A semiconductor device, comprising:
- a doped region disposed in a substrate comprising at least one fin;
- a bottom dielectric layer disposed on the doped region;
- a bottom semiconductor layer disposed aside and in contact with the bottom dielectric layer;
- a gate structure disposed on the bottom dielectric layer;
- and
- source/drain (S/D) regions disposed on the bottom dielectric layer at opposite sides of the gate structure, wherein the bottom dielectric layer is configured to prevent dopants in the doped region from diffusing into the S/D regions, wherein the bottom dielectric layer extends continuously along an extending direction of the fin from directly under one of the S/D regions across the gate structure to directly below the other of the S/D regions with the same thickness.
A method of forming a semiconductor device, comprising:
- forming a gate structure over a substrate comprising at least one fin;
- forming a first source/drain (S/D) region over the substrate at a first side of the gate structure;
- forming a second S/D region over the substrate at a second side of the gate structure;
- forming a bottom dielectric layer between the gate structure and the substrate, wherein the bottom dielectric layer extends continuously along an extending direction of the fin from directly under the first S/D region across the gate structure to directly below the second S/D region with the same thickness;
- and
- forming a bottom semiconductor layer aside the bottom dielectric layer, wherein the bottom semiconductor layer is in contact with the bottom dielectric layer.
Dependencies are inferred from the claim text.