Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Han LU, Yi-Bo LIAO, Cheng-Ting CHUNG, Hou-Yu CHEN, Jin CAI
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Abstract
A semiconductor structure includes a substrate, a plurality of active channels vertically stacked to each other, a first dielectric layer in the topmost active channel, and a first oxide layer in the topmost active channel and includes a first lateral oxide portion connected with the first dielectric layer. The first lateral oxide portion has a thickness greater than that of the first dielectric layer due to an ox-oxidation.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a plurality of active channels vertically stacked to each other;
- a first dielectric layer in the topmost active channel;
- and
- a first oxide layer in the topmost active channel, comprising
- a first lateral oxide portion connected with the first dielectric layer;
- wherein the first lateral oxide portion has a thickness greater than that of the first dielectric layer.
A semiconductor structure, comprising:
- a substrate;
- a plurality of active channels vertically stacked to each other;
- a blocking layer above the topmost active channel;
- a first dielectric layer in the topmost active channel;
- and
- a first oxide layer in the topmost active channel, comprising:
- a lateral oxide portion connected with the first dielectric layer;
- wherein the lateral oxide portion has a thickness greater than that of the first dielectric layer.
A manufacturing method for a semiconductor structure, comprising:
- forming a plurality of active channels on a substrate;
- forming a first spacer on the active channels;
- forming a first dielectric layer in the topmost active channel;
- and
- applying a plasma to the first spacer and the topmost active channel to re-oxidize the first spacer and form a first oxide layer in the topmost active channel, wherein a first lateral oxide portion of the first oxide layer is connected with the first dielectric layer, and the first lateral oxide portion has a thickness greater than that of the first dielectric layer.
Dependencies are inferred from the claim text.