H10D 30/0191
Forming stacked channels
Official title: {forming stacked channels, e.g. changing their shapes or sizes}
H10D30/0191 (Forming stacked channels) appears on 891 US grants and 1,778 published applications in this corpus.
Search patents in H10D- Granted patents
- 891
- Published applications
- 1,778
- Assignees
- 91
- Inventors
- 2,131
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 1 | 0 |
| 2005 | 0 | 4 |
| 2006 | 0 | 1 |
| 2007 | 3 | 4 |
| 2008 | 2 | 6 |
| 2009 | 2 | 6 |
| 2010 | 5 | 5 |
| 2011 | 2 | 5 |
| 2012 | 6 | 8 |
| 2013 | 9 | 5 |
| 2014 | 6 | 12 |
| 2015 | 10 | 19 |
| 2016 | 36 | 29 |
| 2017 | 31 | 59 |
| 2018 | 43 | 38 |
| 2019 | 48 | 46 |
| 2020 | 50 | 99 |
| 2021 | 72 | 109 |
| 2022 | 94 | 172 |
| 2023 | 93 | 207 |
| 2024 | 130 | 259 |
| 2025 | 180 | 320 |
| 2026 | 68 | 365 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device including inclined channel layer and electronic device including the semiconductor device1 Sep 2026US 12,727,190 B2Samsung Electronics Co., Ltd.
- Nanosheet channel formation method and structure25 Aug 2026US 12,720,785 B2Taiwan Semicondutor Manufacturing Co.
- Integrated circuit device25 Aug 2026US 12,721,135 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and manufacturing method thereof11 Aug 2026US 12,707,686 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contacts for semiconductor devices and methods of forming the same11 Aug 2026US 12,707,692 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Backside contact to devices with wide source/drain regions8 Oct 2026US 2026/0314042 A1Intel Corporation
- Semiconductor devices8 Oct 2026US 2026/0314043 A1Samsung Electronics Co., Ltd.
- Semiconductor device and methods of forming the same8 Oct 2026US 2026/0314045 A1
Most cited
By later US patents
- Germanium FinFETs with metal gates and stressors556US 9,245,805 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Vertical thin film transistors with surround gates188US 9,673,257 B1SanDisk Technologies LLC · 2017
- Strained nanowire CMOS device and method of forming157US 9,853,101 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Horizontal gate-all-around device having wrapped-around source and drain137US 10,109,721 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Silicon and silicon germanium nanowire structures133US 8,753,942 B2Intel Corporation · 2014