H10D 30/0194
The stacked channels having different properties
Official title: {the stacked channels having different properties}
H10D30/0194 (The stacked channels having different properties) appears on 252 US grants and 429 published applications in this corpus.
Search patents in H10D- Granted patents
- 252
- Published applications
- 429
- Assignees
- 35
- Inventors
- 769
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 3 |
| 2006 | 0 | 0 |
| 2007 | 3 | 4 |
| 2008 | 1 | 4 |
| 2009 | 2 | 4 |
| 2010 | 3 | 1 |
| 2011 | 1 | 1 |
| 2012 | 2 | 6 |
| 2013 | 7 | 3 |
| 2014 | 0 | 2 |
| 2015 | 5 | 4 |
| 2016 | 9 | 5 |
| 2017 | 5 | 11 |
| 2018 | 7 | 6 |
| 2019 | 7 | 14 |
| 2020 | 10 | 22 |
| 2021 | 17 | 34 |
| 2022 | 30 | 53 |
| 2023 | 25 | 60 |
| 2024 | 38 | 67 |
| 2025 | 57 | 86 |
| 2026 | 23 | 39 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and manufacturing method thereof11 Aug 2026US 12,707,686 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of fabricating the same4 Aug 2026US 12,701,748 B2Samsung Electronics Co., Ltd.
- Manufacturing method of integrated circuit structure4 Aug 2026US 12,701,757 B2National Yang Ming.Chiao Tung University
- Fabrication of gate-all-around integrated circuit structures having additive gate structures2 Jun 2026US 12,648,180 B2Intel Corporation
- FinFET device with partial interface dipole formation for reduction of gate induced drain leakage26 May 2026US 12,641,818 B2International Business Machines Corporation
- Semiconductor device and manufacturing method thereof10 Sep 2026US 2026/0271391 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices and methods of manufacturing13 Aug 2026US 2026/0239690 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Source/drain features for stacked multi-gate device13 Aug 2026US 2026/0239693 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Stacked transistor with etch stop bonding13 Aug 2026US 2026/0239946 A1International Business Machines Corporation
- Semiconductor device structure and methods of forming the same30 Jul 2026US 2026/0223442 A1
Most cited
By later US patents
- Vertical thin film transistors with surround gates188US 9,673,257 B1SanDisk Technologies LLC · 2017
- Semiconductor device and method for manufacturing semiconductor device50US 9,059,219 B2Semiconductor Energy Laboratory Co.Ltd. · 2015
- Nanowire mesh FET with multiple threshold voltages39US 8,422,273 B2International Business Machines Corporation · 2013
- Gate-all-around nanowire device and method for manufacturing such a device35US 9,991,261 B2Imec Vzw · 2018
- Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels29US 7,648,883 B2Samsung Electronics Co., Ltd. · 2010