Stacked transistor with etch stop bonding
AssigneeInternational Business Machines Corporation
InventorsDebarghya Sarkar, Ruilong Xie, Shay Reboh, Junli Wang
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Abstract
The present disclosure describes fabrication methods and resulting semiconductor integrated circuit (IC) devices that include a stacked transistor with an etch stop bonding structure. The etch stop bonding structure may provide etch stop protection, at least associated with the pre-clean etch and subsequent fabrication of an associated source/drain region of a top transistor. The etch stop bonding structure may protect against or prevent the associated fabricated source/drain region electrically shorting with an adjacent gate structure.
Claims20
A semiconductor integrated circuit (IC) device comprising:
- a top transistor comprising a top source/drain (S/D) region;
- a bottom transistor;
- and
- an etch stop bonding structure comprising a bonding layer directly connected to the bottom transistor and an etch stop layer directly connected to the top transistor.
A semiconductor integrated circuit (IC) device comprising:
- a top transistor comprising a top source/drain (S/D) region;
- a bottom transistor comprising a bottom S/D region inline and below the top S/D region;
- and
- an etch stop bonding structure comprising a bonding layer directly connected to the bottom transistor and an etch stop layer directly connected to the top transistor.
A semiconductor integrated circuit (IC) device fabrication method comprising:
- forming a bottom transistor;
- forming a bonding layer upon the bottom transistor;
- forming an etch stop layer and directly connecting the etch stop layer to the bonding layer;
- and
- forming a top transistor upon the etch stop layer, wherein forming the top transistor comprises:
- forming a top source/drain canyon that gouges a portion of the etch stop layer;
- and
- forming a top source/drain region within the top source/drain canyon,
- wherein the gouge within the etch stop layer is directly under a bottom surface of the top source/drain region.
Dependencies are inferred from the claim text.