Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsDaihong HUH, Dahye KIM, Cheoljin YUN, Sungyub JI
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes first and second transistors and a first contact plug. The first transistor includes a first gate structure, first channels and a first source/drain layer. The second transistor is disposed on the first transistor, and includes a second gate structure, second channels and a second source/drain layer. The first contact plug extends through the second source/drain layer and contacts an upper surface of the first source/drain layer. A first width in the second direction of a central portion in the first direction of the first contact plug is smaller than a second with in the second direction of each of opposite end portions in the first direction of the first contact plug.
Claims19
A semiconductor device, comprising:
- a first transistor including:
- a first gate structure extending in a first direction;
- first channels each extending through the first gate structure in a second direction crossing the first direction, the first channels being spaced apart from each other in a third direction perpendicular to the first and second directions;
- and
- a first source/drain layer at a first side in the second direction of the first gate structure;
- a second transistor on the first transistor, the second transistor including:
- a second gate structure extending in the first direction;
- second channels each extending through the second gate structure in the second direction, the second channels being spaced apart from each other in the third direction;
- and
- a second source/drain layer at a first side in the second direction of the second gate structure;
- and
- a first contact plug extending through the second source/drain layer and contacting an upper surface of the first source/drain layer,
- wherein a first width in the second direction of a central portion in the first direction of the first contact plug is smaller than a second width in the second direction of each of opposite end portions in the first direction of the first contact plug.
A semiconductor device, comprising:
- a first gate structure;
- first channels each extending through the first gate structure in a first direction, the first channels being spaced apart from each other in a second direction perpendicular to the first direction;
- first and second source/drain layers at opposite sides, respectively, in the first direction of the first gate structure;
- an insulation pattern structure on each of the first and second source/drain layers;
- a second gate structure on the first gate structure;
- second channels each extending through the second gate structure in the first direction, the second channels being spaced apart from each other in the second direction;
- third and fourth source/drain layers at opposite sides, respectively, in the first direction of the second gate structure;
- a first contact plug extending through the third source/drain layer and contacting an upper surface of the first source/drain layer;
- and
- a second contact plug extending through the fourth source/drain layer and contacting an upper surface of the insulation pattern structure,
- wherein the third source/drain layer and the fourth source/drain layer have the same shape.
A semiconductor device, comprising:
- a first transistor including:
- a first gate structure extending in a first direction;
- first channels each extending through the first gate structure in a second direction crossing the first direction, the first channels being spaced apart from each other in a third direction perpendicular to the first and second directions;
- and
- first and second source/drain layers at opposite sides, respectively, in the second direction of the first gate structure;
- an insulation pattern structure on each of the first and second source/drain layers;
- a second transistor on the first transistor, the second transistor including:
- a second gate structure extending in the first direction;
- second channels each extending through the second gate structure in the second direction, the second channels being spaced apart from each other in the third direction;
- and
- third and fourth source/drain layers at opposite sides, respectively, in the second direction of the second gate structure on the insulation pattern structure;
- a first contact plug extending through the third source/drain layer and contacting an upper surface of the first source/drain layer;
- and
- a second contact plug extending through the fourth source/drain layer and contacting an upper surface of the insulation pattern structure.
Dependencies are inferred from the claim text.